Author: Kasper E. Lyutovich K. Bauer M. Oehme M.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.336, Iss.1, 1998-12, pp. : 319-322
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Performance Potential and Limit of MoS2 Transistors
ADVANCED MATERIALS, Vol. 27, Iss. 9, 2015-03 ,pp. :
A vertical MOS-gated Esaki tunneling transistor in silicon
By Hansch W. Fink C. Schulze J. Eisele I.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :