Observation of high electric field at ZnSe/GaAs heterointerfaces by fast Fourier transformed photoreflectance

By Nukeaw J.   Fujiwara Y.   Takeda Y.   Funato M.   Aoki S.   Fujita S.   Fujita S.  

Thin Solid Films, Vol. 334, Iss. 1, 1998-12 ,pp. : 11-14

Elsevier

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Structural and optical properties of undoped and doped ZnSe/GaAs strained heterostructures

By Kim T.W.   Jung M.   Lee D.U.   Oh E.   Lee S.D.   Jung H.D.   Kim M.D.   Kim J.R.   Park H.S.   Lee J.Y.  

Thin Solid Films, Vol. 298, Iss. 1, 1997-04 ,pp. : 187-190

Elsevier

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Stacking faults in pseudomorphic ZnSe-GaAs and latticematched ZnSe-In0.04 Ga0.96 As layers

By Bonard J-M.   Ganiere J-D.  

Philosophical Magazine Letters, Vol. 75, Iss. 4, 1997-04 ,pp. : 219-226

Taylor & Francis Ltd

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In situ monitoring of ZnS/GaP and ZnSe/GaAs metalorganic vapor phase epitaxy using reflectance anisotropy spectroscopy and spectroscopic ellipsometry

By Meyne C.   Gensch M.   Peters S.   Pohl U.W.   Zettler J.-T.   Richter W.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 12-15

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Raman analysis of LO phonon-plasmon coupled modes at ZnS:N/(n+,p+)-GaAs interfaces

By Pages O.   Lazreg A.   Zaoui A.   Certier M.   Thiandoume C.   Bouanani A.   Svob L.   Gorochov O.   Bormann D.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 124-128

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