Control of orientation from random to (220) or (400) in polycrystalline silicon films

Author： Kamiya T.   Nakahata K.   Miida A.   Fortmann C.M.   Shimizu I.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.337, Iss.1, 1999-01, pp. : 18-22

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Properties of polycrystalline silicon films prepared from fluorinated precursors

By Ray S.   Mukhopadhyay S.   Saha S.C.   Hazra S.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 7-11

Elsevier

Access to resources Recommend Favorite

Doped Polycrystalline Silicon Thin Films Deposited on Glass from Trichlorosilane**

By  

CHEMICAL VAPOR DEPOSITION (ELECTRONIC), Vol. 21, Iss. 1-2-3, 2015-03 ,pp. : 54-62

John Wiley & Sons Inc

Access to resources Recommend Favorite

Carrier transport, structure and orientation in polycrystalline silicon on glass

By Nakahata K.   Miida A.   Kamiya T.   Fortmann C.M.   Shimizu I.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 45-50

Elsevier

Access to resources Recommend Favorite

Polycrystalline silicon thin films for MEMS applications

By Mahfoz-Kotb H.   Salaun A.C.   Mohammed-Brahim T.   Le Bihan F.   El-Marssi M.  

Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 422-426

Elsevier

Access to resources Recommend Favorite

Conductivity of boron-implanted polycrystalline thin silicon films

By Mansour F.   Bouchemat M.   Boukezzata M.   Touidjen N.H.   Bielle-Daspet D.   Mirouh K.  

Thin Solid Films, Vol. 261, Iss. 1, 1995-06 ,pp. : 12-17

Elsevier

Access to resources Recommend Favorite