Carrier-gas effects on characteristics of copper chemical vapor deposition using hexafluoro-acetylacetonate-copper (1) trimethylvinylsilane

By Awaya N.   Arita Y.  

Thin Solid Films, Vol. 262, Iss. 1, 1995-06 ,pp. : 12-19

Elsevier

Access to resources Recommend Favorite

Selective chemical vapor deposition of copper using (hfac) copper(I) vinyltrimethylsilane in the absence and presence of water

By Gelatos A.V.   Mogab C.J.   Marsh R.   Kodas E.T.T.   Jain A.   Hampden-Smith M.J.  

Thin Solid Films, Vol. 262, Iss. 1, 1995-06 ,pp. : 52-59

Elsevier

Access to resources Recommend Favorite

Metal-organic chemical vapor deposition of copper using hydrated copper formate as a new precursor

By Mouche M.-J.   Mermet J.-L.   Romand M.   Charbonnier M.  

Thin Solid Films, Vol. 262, Iss. 1, 1995-06 ,pp. : 1-6

Elsevier

Access to resources Recommend Favorite

The chemical vapor deposition of copper and copper alloys

By Doppelt P.   Baum T.H.  

Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. : 480-482

Elsevier

Access to resources Recommend Favorite

Epitaxial growth with phosphorus - 4. Application of dichloro-t-butylphosphine to CVD processes: the thermal chemical vapor deposition formation of copper phosphide thin films and etching of indium phosphide by dichloro-t-butylphosphine [1]

By Glass J.A.   Spencer J.T.  

Thin Solid Films, Vol. 322, Iss. 1, 1998-06 ,pp. : 138-142

Elsevier

Access to resources Recommend Favorite