-SiC layers grown on silicon via nano-sized silicon nitride precursor route

Author： Liu R.   Yang B.   Fu Z.   Chen Q.   Hong L.   Li M.   Liu Z.   Ruan Y.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.345, Iss.2, 1999-05, pp. : 188-191

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

SiC NWs Grown on Silicon Substrate Using Fe as Catalyst

By  

Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. : 39-42

Trans Tech Publications

Access to resources Recommend Favorite

Relaxed Si 0.7 Ge 0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs

By Wohl G.   Dudek V.   Graf M.   Kibbel H.   Herzog H.-J.   Klose M.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 175-181

Elsevier

Access to resources Recommend Favorite

Phase Analysis and Study of the Microstructure of Cordierite-Si 3 N 4 Composite Synthesis by Nano- and Micro-Sized Silicon Particles

By Zamir S. Sharafi  

Molecular Crystals and Liquid Crystals, Vol. 555, Iss. 1, 2012-04 ,pp. : 121-128

Taylor & Francis Ltd

Access to resources Recommend Favorite

Auger electron spectroscopy study of SiC thin films deposited on silicon

By Lei Y.M.   Yu Y.H.   Cheng L.L.   Ren C.X.   Zou S.C.  

Vacuum, Vol. 58, Iss. 4, 2000-09 ,pp. : 602-608

Elsevier

Access to resources Recommend Favorite

Anger and energy loss spectroscopy analysis of silicon carbide (SiC) surfaces

By Ghamnia M.   Jardin C.   Kadri D.   Bouslama M.  

Vacuum, Vol. 47, Iss. 2, 1996-02 ,pp. : 141-143

Elsevier

Access to resources Recommend Favorite