A new InGaP/GaAs double delta-doped heterojunction bipolar transistor (D 3 HBT)

Author: Cheng S.-Y.   Wang W.-C.   Chang W.-L.   Chen J.-Y.   Pan H.-J.   Liu W.-C.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.345, Iss.2, 1999-05, pp. : 270-272

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