Three-dimensional islands of Si and Ge formed on SiO 2 through crystallization and agglomeration from amorphous thin films

Author: Wakayama Y.   Tagami T.   Tanaka S.-i.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.350, Iss.1, 1999-08, pp. : 300-307

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Abstract