Enhancement of bulk nucleation in a-Si 1-x Ge x on SiO 2 for low-temperature solid-phase crystallization

By Sadoh T.   Tsunoda I.   Nagata T.   Kenjo A.   Miyao M.  

Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 96-100

Elsevier

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Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO 2 and glass

By Olivares J.   Rodrguez A.   Sangrador J.   Rodrguez T.   Ballesteros C.   Kling A.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 51-54

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Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO 2

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Three-dimensional islands of Si and Ge formed on SiO 2 through crystallization and agglomeration from amorphous thin films

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Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization

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