Effect of GeF 4 addition on the growth of hydrogenated microcrystalline silicon film by plasma-enhanced chemical vapor deposition

Author： Shirai H.   Fukuda Y.   Nakamura T.   Azuma K.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.350, Iss.1, 1999-08, pp. : 38-43

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Solid-phase crystallization of hydrogenated amorphous silicon/hydrogenated microcrystalline silicon bilayers deposited by plasma-enhanced chemical vapor deposition

By Park C.-D.   Kim H.-Y.   Cho M.-H.   Jan K.-J.   Lee J.-Y.  

Thin Solid Films, Vol. 359, Iss. 2, 2000-01 ,pp. : 268-274

Elsevier

Access to resources Recommend Favorite

Effect of hydrogen dilution on the growth of nanocrystalline silicon films at high temperature by using plasma-enhanced chemical vapor deposition

By Ali A.M.   Hasegawa S.  

Thin Solid Films, Vol. 437, Iss. 1, 2003-08 ,pp. : 68-73

Elsevier

Access to resources Recommend Favorite

The influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-enhanced chemical vapor deposition

By Kim H.-Y.   Lee K.-Y.   Lee J.-Y.  

Thin Solid Films, Vol. 302, Iss. 1, 1997-06 ,pp. : 17-24

Elsevier

Access to resources Recommend Favorite

Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films

By Aguas H.   Silva V.   Ferreira I.   Fortunato E.   Martins R.  

Philosophical Magazine B, Vol. 80, Iss. 4, 2000-04 ,pp. : 475-486

Taylor & Francis Ltd

Access to resources Recommend Favorite

Plasma-enhanced chemical vapor deposition of silicon carbonitride using hexamethyldisilazane and nitrogen

By Kuo D.-H.   Yang D.-G.  

Thin Solid Films, Vol. 374, Iss. 1, 2000-10 ,pp. : 92-97

Elsevier

Access to resources Recommend Favorite