Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization

Author： Chen G.S. Lee P.Y. Chen S.T.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.353, Iss.1, 1999-09, pp. : 264-273

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Material characteristics and electrical property of reactively sputtered RuO 2 thin films

By Huang J.H. Chen J.S.

Thin Solid Films, Vol. 382, Iss. 1, 2001-02 ,pp. : 139-145

Elsevier

Access to resources Recommend Favorite

Effects of oxygen gettering and target mode change in the formation process of reactively RF sputtered WO x thin films

By Yamamoto A. Abe Y. Kawamura M. Sasaki K.

Vacuum, Vol. 66, Iss. 3, 2002-08 ,pp. : 269-273

Elsevier

Access to resources Recommend Favorite

Properties of reactively sputtered WN x as Cu diffusion barrier

By Suh B.-S. Lee Y.-J. Hwang J.-S. Park C.-O.

Thin Solid Films, Vol. 348, Iss. 1, 1999-07 ,pp. : 299-303

Elsevier

Access to resources Recommend Favorite

Structural, chemical, and electrical characterisation of reactively sputtered WS x thin films

By Regula M. Ballif C. Moser J.H. Levy F.

Thin Solid Films, Vol. 280, Iss. 1, 1996-07 ,pp. : 67-75

Elsevier

Access to resources Recommend Favorite

Physical and mechanical properties of reactively sputtered chromium boron nitride thin films

By Gorishnyy T.Z. Mihut D. Rohde S.L. Aouadi S.M.

Thin Solid Films, Vol. 445, Iss. 1, 2003-11 ,pp. : 96-104

Elsevier

Access to resources Recommend Favorite