Carbon dependence of the dielectric response function in epitaxial SiGeC layers grown on Si

Author： Bonan J.   Meyer F.   Finkman E.   Warren P.   Boher P.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.364, Iss.1, 2000-03, pp. : 53-57

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

SiGe(C) epitaxial technologies-issues and prospectives

By Grasby T.J.   Whall T.E.   Parker E.H.C.  

Thin Solid Films, Vol. 412, Iss. 1, 2002-06 ,pp. : 44-49

Elsevier

Access to resources Recommend Favorite

Synthesis of SiGeC layers by ion implantation of Ge and C

By Kurata H.   Ohfuti M.   Futatsugi T.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 217-221

Elsevier

Access to resources Recommend Favorite

Carbon and germanium distributions in Si 1-x-y Ge x C y layers epitaxially grown on Si(001) by RTCVD

By Guedj C.   Portier X.   Hairie A.   Bouchier D.   Piriou B.   Calvarin G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 129-132

Elsevier

Access to resources Recommend Favorite

Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)

By Zhu J.   Liu S.   Liang J.  

Thin Solid Films, Vol. 368, Iss. 2, 2000-06 ,pp. : 307-311

Elsevier

Access to resources Recommend Favorite

Improvement of 4H-SiC Epitaxial Layers Grown on 2o Offcut Si-Face Substrates

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 133-136

Trans Tech Publications

Access to resources Recommend Favorite