Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition

By Xu D.   Yang H.   Li J.B.   Li S.F.   Zhao D.G.   Wang Y.T.   Sun X.L.   Wu R.H.  

Thin Solid Films, Vol. 368, Iss. 2, 2000-06 ,pp. : 279-282

Elsevier

Access to resources Recommend Favorite

Low-temperature growth of cubic GaN by metalorganic chemical-vapor deposition

By Zheng L.X.   Yang H.   Xu D.P.   Wang X.J.   Li X.F.   Li J.B.   Wang Y.T.   Duan L.H.   Hu X.W.  

Thin Solid Films, Vol. 326, Iss. 1, 1998-08 ,pp. : 251-255

Elsevier

Access to resources Recommend Favorite

X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate

By Qu B.   Zheng X.H.   Wang Y.T.   Feng Z.H.   Liu S.A.   Lin S.M.   Yang H.   Liang J.W.  

Thin Solid Films, Vol. 392, Iss. 1, 2001-07 ,pp. : 29-33

Elsevier

Access to resources Recommend Favorite

Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

By Feng Z.C.   Zhang X.   Chua S.J.   Yang T.R.   Deng J.C.   Xu G.  

Thin Solid Films, Vol. 409, Iss. 1, 2002-04 ,pp. : 15-22

Elsevier

Access to resources Recommend Favorite

Photocurrent measurements on GaAs 1-x N x epilayers grown by metalorganic chemical vapor deposition

By Kim T.S.   Cuong T.V.   Park C.S.   Park J.Y.   Lee H.J.   Suh E.-K.   Hong C.-H.  

Journal of Crystal Growth, Vol. 260, Iss. 3, 2004-01 ,pp. : 336-342

Elsevier

Access to resources Recommend Favorite