Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates

By Fujikura H.   Kihara M.   Hasegawa H.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 22-25

Elsevier

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GaN substrates for molecular beam epitaxy growth of homoepitaxial structures

By Grzegory I.   Porowski S.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 281-289

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Some characteristics of silicon-doped In 0.52 Al 0.48 As grown lattice-matched on InP substrates by molecular beam epitaxy

By Yoon S.F.   Miao Y.B.   Radhakrishnan K.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 284-287

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Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

By Muller E.   Hartmann R.   David C.   Grutzmacher D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

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Rapid thermal annealing effects in CdTe (111) thin films grown on Si (100) substrates by molecular beam epitaxy

By Han M.S.   Ryu Y.S.   Song B.K.   Kang T.W.   Kim T.W.  

Thin Solid Films, Vol. 293, Iss. 1, 1997-01 ,pp. : 196-199

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