Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs

Author： Tezuka T.   Kurobe A.   Sugiyama N.   Takagi S.-i.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 338-341

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