Author： Heinemann B. Knoll D. Fischer G.G. Schley P. Osten H.J.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 347-351
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Pseudomorphic Si 1-y C y and Si 1-x-y Ge x C y alloy layers on Si
By Eberl K. Brunner K. Winter W.
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
Access to resources
Recommend
Si/Si 1-x Ge x and Si/Si 1-y C y heterostructures: materials for high-speed field-effect transistors
By Schaffler F.
Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. :
High-speed transport in Si/Si 1-x-y Ge x C y heterostructures
By Muhlberger M. Schelling C. Sandersfeld N. Seyringer H. Schaffler F.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Hole mobilities in pseudomorphic Si 1-x-y Ge x C y alloy layers
By Duschl R. Seeberger H. Eberl K.
Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. :