Author： Kim D.-J. Jung Y.-B. Lee M.-B. Lee Y.-H. Lee J.-H. Lee J.-H.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.372, Iss.1, 2000-09, pp. : 276-283
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
W-B-N diffusion barriers for Si/Cu metallizations
By Reid J.S. Liu R.Y. Nicolet M.-A. Smith P.M. Ruiz R.P.
Thin Solid Films, Vol. 262, Iss. 1, 1995-06 ,pp. :
Access to resources
Recommend
A comparative study of sputtered TaC x and WC x films as diffusion barriers between Cu and Si
By Wang S.J. Tsai H.Y. Sun S.C.
Thin Solid Films, Vol. 394, Iss. 1, 2001-08 ,pp. :
WN x diffusion barriers between Si and Cu
By Murakami M. Uekubo M. Oku T. Nii K. Takahiro K. Yamaguchi S. Ohta T. Nakano T.
Thin Solid Films, Vol. 286, Iss. 1, 1996-09 ,pp. :
Characteristics of TiN barrier layer against Cu diffusion
By Kwak M.Y. Shin D.H. Kang T.W. Kim K.N.
Thin Solid Films, Vol. 339, Iss. 1, 1999-02 ,pp. :
Evaluation of HfN thin films considered as diffusion barriers in the Al/HfN/Si system
Thin Solid Films, Vol. 305, Iss. 1, 1997-08 ,pp. :