Behaviors of electron and negative-ion densities in low-pressure high-density inductively coupled plasmas of SF 6 , NF 3 , CF 4 , and C 4 F 8 gases diluted with Ar

By Kono A.   Konishi M.   Kato K.  

Thin Solid Films, Vol. 407, Iss. 1, 2002-03 ,pp. : 198-203

Elsevier

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Difference between C 4 F 8 and C 5 F 8 plasmas in surface reaction processes for selective etching of SiO 2 over Si 3 N 4

By Motomura H.   Imai S.-i.   Tachibana K.  

Thin Solid Films, Vol. 374, Iss. 2, 2000-10 ,pp. : 243-248

Elsevier

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Surface reaction processes in C 4 F 8 and C 5 F 8 plasmas for selective etching of SiO 2 over photo-resist

By Motomura H.   Imai S.-i.   Tachibana K.  

Thin Solid Films, Vol. 390, Iss. 1, 2001-06 ,pp. : 134-138

Elsevier

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Radical kinetics for polymer film deposition in fluorocarbon (C 4 F 8 , C 3 F 6 and C 5 F 8 ) plasmas

By Takahashi K.   Itoh A.   Nakamura T.   Tachibana K.  

Thin Solid Films, Vol. 374, Iss. 2, 2000-10 ,pp. : 303-310

Elsevier

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C x F y polymer film deposition in DC and RF fluorinert vapor plasmas

By Lungu C.P.   Lungu A.M.   Sakai Y.   Sugawara H.   Tabata M.   Akazawa M.   Miyamoto M.  

Vacuum, Vol. 59, Iss. 1, 2000-10 ,pp. : 210-219

Elsevier

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