Author: Shi J. Irie T. Takahashi F. Hashimoto M.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.375, Iss.1, 2000-10, pp. : 37-41
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Self-ordering of CoSi 2 precipitates and epitaxial layer growth of CoSi 2 on Si(100)
By Mantl S. Hacke M. Bay H.L. Kappius L. Mesters S.
Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. :
Comparison of epitaxial growth of CoSi 2 among Co/Ti, Co/Hf, and Co/Nb bilayers on (100)Si
Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. :
The growth of CoSi 2 using a Co/Zr bilayer on different Si substrates
Thin Solid Films, Vol. 346, Iss. 1, 1999-06 ,pp. :
The growth of CoSi 2 through an oxide layer: dependence on Si(100) surface structure
Thin Solid Films, Vol. 379, Iss. 1, 2000-12 ,pp. :