Influence of the band offset on the performance of photodevices based on the c-Si/a-Si:H heterostructure

Author： Fantoni A.   Vigranenko Y.   Fernandes M.   Schwarz R.   Vieira M.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.383, Iss.1, 2001-02, pp. : 314-317

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure

By  

Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. : 89-93

Trans Tech Publications

Access to resources Recommend Favorite

New Evidence for the Second Conduction Band in 4H SiC

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 250-253

Trans Tech Publications

Access to resources Recommend Favorite

Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 476-479

Trans Tech Publications

Access to resources Recommend Favorite

Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 761-764

Trans Tech Publications

Access to resources Recommend Favorite

Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 143-146

Trans Tech Publications

Access to resources Recommend Favorite