Stress field polarity effect on defects generation in thin silicon dioxide films

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Elsevier

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Surfactant-grown low-doped germanium layers on silicon with high electron mobilities

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Femtosecond laser irradiation of metal and thermal oxide layers on silicon: studies utilising cross-sectional transmission electron microscopy

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Applied Physics A, Vol. 91, Iss. 3, 2008-06 ,pp. : 473-478

Springer Publishing Company

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Formation of high-quality silicon dioxide films by electron cyclotron resonance plasma oxidation and plasma-enhanced chemical vapour deposition

By Landheer D.   Hulse J.E.   Quance T.  

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Structure and morphological studies of thin porous silicon layers

By Vitanov P.   Delibasheva M.   Goranova E.   Angelov C.   Dimov V.  

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