The Properties of a-Si:H p-i-n Solar Cell by Intrinsic Layer's Thickness

By Shin Jae-Won   Park Kwang-Mook   Kim Jin-Eui   Choi Sie-Young  

Molecular Crystals and Liquid Crystals, Vol. 551, Iss. 1, 2011-11 ,pp. : 257-263

Taylor & Francis Ltd

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Direct observation of dislocations propagated from 4H-SiC substrate to epitaxial layer by X-ray topography

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Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 209-216

Elsevier

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Preparation of B-doped a-Si 1-x C x :H films and heterojunction p-i-n solar cells by the Cat-CVD method

By Chikusa K.   Takemoto K.   Itoh T.   Yoshida N.   Nonomura S.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 245-248

Elsevier

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Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 185-188

Trans Tech Publications

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Requirements on amorphous semiconductors for medical X-ray detectors

By Hoheisel M.   Batz L.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 132-136

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