Effect of gas pressure on the synthesis of carbon nitride films during plasma-enhanced chemical vapor deposition

Author： Yu W. Ren G.B. Wang S.F. Han L. Li X.W. Zhang L.S. Fu G.S.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.402, Iss.1, 2002-01, pp. : 55-59

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Structural properties of amorphous carbon nitride films prepared by remote plasma-enhanced chemical vapor deposition

By Baik H.K. Kim J.H. Kim Y.H. Choi D.J.

Thin Solid Films, Vol. 289, Iss. 1, 1996-11 ,pp. : 79-83

Elsevier

Access to resources Recommend Favorite

Si-containing crystalline carbon nitride derived from microwave plasma-enhanced chemical vapor deposition

By Chen L.C. Chen K.H. Chen C.K. Bhusari D.M. Yang C.Y. Lin M.C. Huang Y.F. Chuang T.J.

Thin Solid Films, Vol. 303, Iss. 1, 1997-07 ,pp. : 66-75

Elsevier

Access to resources Recommend Favorite

Carbon nitride films incorporated with metal by rf plasma enhanced chemical vapor deposition

By He J.L. Chang W.L.

Thin Solid Films, Vol. 312, Iss. 1, 1998-01 ,pp. : 86-92

Elsevier

Access to resources Recommend Favorite

Synthesis of Sn-doped a-C:H films by RF plasma-enhanced chemical vapor deposition and their characterization

By Inoue Y. Komoguchi T. Nakata H. Takai O.

Thin Solid Films, Vol. 322, Iss. 1, 1998-06 ,pp. : 41-45

Elsevier

Access to resources Recommend Favorite

Growth and microhardness of SiC films by plasma-enhanced chemical vapor deposition

By Seo J.-Y. Yoon S.-Y. Niihara K. Kim K.H.

Thin Solid Films, Vol. 406, Iss. 1, 2002-03 ,pp. : 138-144

Elsevier

Access to resources Recommend Favorite