Author: Lee W.-H. Lin J.-C. Lee C. Cheng H.-C. Yew T.-R.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.405, Iss.1, 2002-02, pp. : 17-22
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
-SiC Thin film growth using microwave plasma activated CH 4 -SiH 4 sources
By Kim H.S. Park Y.J. Choi I.H. Baik Y.-J.
Thin Solid Films, Vol. 341, Iss. 1, 1999-03 ,pp. :
Epitaxial growth of Si 1-x-y Ge x C y film on Si(100) in a SiH 4 -GeH 4 -CH 3 SiH 3 reaction
By Ichikawa A. Hirose Y. Ikeda T. Noda
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Doping and microwave power effects in the preparation of n-type SiC:H films using ECR-CVD
Vacuum, Vol. 48, Iss. 5, 1997-05 ,pp. :
Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :