Hydrogenated amorphous silicon films prepared at low substrate temperature on a cathode of an asymmetric r.f. plasma CVD system

By Seth T.   Dixit P.N.   Mukherjee C.   Anandan C.   Bhattacharyya R.  

Thin Solid Films, Vol. 264, Iss. 1, 1995-08 ,pp. : 11-17

Elsevier

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Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition

By Calcagno L.   Giorgis F.   Makhtari A.   Musumeci P.   Reitano R.  

Philosophical Magazine B, Vol. 80, Iss. 4, 2000-04 ,pp. : 539-546

Taylor & Francis Ltd

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Preparation of hydrogenated amorphous silicon carbide thin films by plasma enhanced chemical vapour deposition

By Huran J.   Safrankova J.   Kobzev A.P.  

Vacuum, Vol. 50, Iss. 1, 1998-05 ,pp. : 103-105

Elsevier

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Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films

By Aguas H.   Silva V.   Ferreira I.   Fortunato E.   Martins R.  

Philosophical Magazine B, Vol. 80, Iss. 4, 2000-04 ,pp. : 475-486

Taylor & Francis Ltd

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The influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-enhanced chemical vapor deposition

By Kim H.-Y.   Lee K.-Y.   Lee J.-Y.  

Thin Solid Films, Vol. 302, Iss. 1, 1997-06 ,pp. : 17-24

Elsevier

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