Growth kinetics of hydrogenated amorphous silicon carbide films by RF plasma-enhanced CVD using two kinds of source materials

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Photoconductivity of amorphous hydrogenated carbon films prepared by plasma CVD of acetylene

By Basu M.   Maity A.B.   Maiti B.   Chaudhuri S.   Pal A.K.  

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Oxidation processes in hydrogenated amorphous silicon nitride films deposited by ArF laser-induced CVD at low temperatures

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High-stability hydrogenated amorphous silicon films for light-soaking prepared by catalytic CVD at high deposition rates

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The influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-enhanced chemical vapor deposition

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