Hf 1-x Si x O 2 deposition by metal organic chemical vapor deposition using the Hf(NEt 2 ) 4 /SiH(NEt 2 ) 3 /O 2 gas system

Author： Ohshita Y. Ogura A. Ishikawa M. Hoshino A. Hiiro S. Suzuki T. Machida H.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.416, Iss.1, 2002-09, pp. : 208-211

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