Modeling etch rate and uniformity of oxide via etching in a CHF 3 /CF 4 plasma using neural networks

Author: Kim B.   Kwon K.-H.   Kwon S.-K.   Park J.-M.   Yoo S.W.   Park K.-S.   You I.-K.   Kim B.-W.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.426, Iss.1, 2003-02, pp. : 8-15

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Abstract