A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTs

Author： Valletta A. Mariucci L. Pecora A. Fortunato G. Ayres J.R. Brotherton S.D.

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.427, Iss.1, 2003-03, pp. : 117-122

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