Properties of a-SiC:H films deposited in high power regime

By Ambrosone G.   Ballarini V.   Coscia U.   Ferrero S.   Giorgis F.   Maddalena P.   Patelli A.   Rava P.   Rigato V.  

Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 279-283

Elsevier

Access to resources Recommend Favorite

Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetylene

By Kumbhar A.   Patil S.B.   Kumar S.   Lal R.   Dusane R.O.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 244-248

Elsevier

Access to resources Recommend Favorite

Influence of nitrogen concentration on conductivity of N-doped a-SiC:H films deposited by PECVD

By Huran J.   Hotovy I.   Kobzev A.P.   Balalykin N.I.  

Vacuum, Vol. 67, Iss. 3, 2002-09 ,pp. : 567-570

Elsevier

Access to resources Recommend Favorite

Annealing effects on a-SiC:H and a-SiC:H(F) thin films deposited by PECVD at room temperature

By Lee Y.H.   Kim D.S.  

Thin Solid Films, Vol. 261, Iss. 1, 1995-06 ,pp. : 192-201

Elsevier

Access to resources Recommend Favorite

Optical properties and chemical structure of ion implanted a-SiC:H

By Tsvetkova T.   Tzenov N.   Tzolov M.   Dimova-Malinovska D.   Adriaenssens G.J.   Pattyn H.  

Vacuum, Vol. 63, Iss. 4, 2001-08 ,pp. : 749-753

Elsevier

Access to resources Recommend Favorite