Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices

Author： Patil S.B.   Vairagar A.V.   Kumbhar A.A.   Sahu L.K.   Ramgopal Rao V.   Venkatramani N.   Dusane R.O.   Schroeder B.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.430, Iss.1, 2003-04, pp. : 63-66

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