Characterisation of metal oxide semiconductor capacitor structure using low-k dielectric methylsilsesquioxane with evaporated aluminium and copper gate

By Aw K.C.   Ibrahim K.  

Thin Solid Films, Vol. 434, Iss. 1, 2003-06 ,pp. : 178-182

Elsevier

Access to resources Recommend Favorite

Study of the material properties and suitability of plasma-deposited fluorine-doped silicon dioxides for low dielectric constant interlevel dielectrics

By Shannon V.L.   Karim M.Z.  

Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. : 498-502

Elsevier

Access to resources Recommend Favorite

Surface modification of adsorbents by dielectric barrier discharge

By Kodama S.   Habaki H.   Sekiguchi H.   Kawasaki J.  

Thin Solid Films, Vol. 407, Iss. 1, 2002-03 ,pp. : 151-155

Elsevier

Access to resources Recommend Favorite

The effects of plasma treatment for low dielectric constant hydrogen silsesquioxane (HSQ)

By Liu P.T.   Chang T.C.   Sze S.M.   Pan F.M.   Mei Y.J.   Wu W.F.   Tsai M.S.   Dai B.T.   Chang C.Y.   Shih F.Y.   Huang H.D.  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 345-350

Elsevier

Access to resources Recommend Favorite

Enhancing the thermal stability of low dielectric constant hydrogen silsesquioxane by ion implantation

By Chang T.C.   Chou M.F.   Mei Y.J.   Tsang J.S.   Pan F.M.   Wu W.F.   Tsai M.S.   Chang C.Y.   Shih F.Y.   Huang  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 351-355

Elsevier

Access to resources Recommend Favorite