Characterisation of metal oxide semiconductor capacitor structure using low-k dielectric methylsilsesquioxane with evaporated aluminium and copper gate

Author： Aw K.C.   Ibrahim K.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.434, Iss.1, 2003-06, pp. : 178-182

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