Low-temperature treatment of Si/SiO 2 structures in an RF hydrogen plasma

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.47, Iss.12, 1996-12, pp. : 1483-1486

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of r.f. hydrogen plasma annealing on the properties of Si/SiO 2 interface: a spectroscopic ellipsometry study

By Paneva A. Szekeres A.

Thin Solid Films, Vol. 433, Iss. 1, 2003-06 ,pp. : 367-370

Elsevier

Access to resources Recommend Favorite

RF hydrogen-plasma-induced defects in p-Si/SiO 2 structures with submicron thermally grown oxides

By Simeonov S. Yourukov I. Szekeres A. Kafedjiiska E.

Vacuum, Vol. 69, Iss. 1, 2002-12 ,pp. : 195-200

Elsevier

Access to resources Recommend Favorite

RF hydrogen-plasma-related defects in thin SiO 2 /p-Si structures

By Simeonov S. Yourukov I. Kafedjiiska E. Szekeres A.

Vacuum, Vol. 61, Iss. 2, 2001-05 ,pp. : 199-203

Elsevier

Access to resources Recommend Favorite

Epitaxial Si/SiO 2 low dimensional structures

By Ishikawa Y. Shibata N. Fukatsu S.

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 234-240

Elsevier

Access to resources Recommend Favorite

Mechanical behavior of microfabricated Si/SiO 2 mushroom structures

By Saul C.K. Lepienski C.M. Cantao M.P. Schreiner W.H.

Sensors and Actuators A: Physical, Vol. 107, Iss. 1, 2003-10 ,pp. : 80-84

Elsevier

Access to resources Recommend Favorite