Selective deposition of amorphous hydrogenated carbon films used as masks for reactive ion etching of Si using CF 4

Author: Alves M.A.   Balachova O.   Braga E.d.S.   Cescato L.  

Publisher: Elsevier

ISSN: 0042-207X

Source: Vacuum, Vol.52, Iss.3, 1999-03, pp. : 313-314

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract