Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 411-415

Trans Tech Publications

Access to resources Recommend Favorite

Interfacial and structural characteristics of CeO 2 films on silicon with a nitrided interface formed by nitrogen-ion-beam bombardment

By Kang J.   Xun K.   Liu X.   Han R.   Wang Y.   Yu D.P.   Lian G.J.   Xiong G.C.   Wu S.C.  

Thin Solid Films, Vol. 416, Iss. 1, 2002-09 ,pp. : 122-128

Elsevier

Access to resources Recommend Favorite

Investigation of structure and composition of buried oxide layers formed by oxygen-ion implantation into silicon

By Patel A. P.   Yadav A. D.   Dubey S. K.   Panigrahi B. K.   Nair K. G. M.  

Radiation Effects and Defects in Solids, Vol. 164, Iss. 1, 2009-01 ,pp. : 49-58

Taylor & Francis Ltd

Access to resources Recommend Favorite

Visible photoluminescence from silicon nanocrystals formed in silicon dioxide by ion implantation and thermal processing

By Shimizu-Iwayama T.   Terao Y.   Kamiya A.   Takeda M.   Nakao S.   Saitoh K.  

Thin Solid Films, Vol. 276, Iss. 1, 1996-04 ,pp. : 104-107

Elsevier

Access to resources Recommend Favorite

A low-energy ion beam system for studying energetic ion deposition on Silicon surfaces

By Shoji F.  

Vacuum, Vol. 53, Iss. 3, 1999-06 ,pp. : 459-464

Elsevier

Access to resources Recommend Favorite