Author: Lavareda G. Nunes de Carvalho C. Amaral A. Conde J.P. Vieira M. Chu V.
Publisher: Elsevier
ISSN: 0042-207X
Source: Vacuum, Vol.64, Iss.3, 2002-01, pp. : 245-248
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Properties of amorphous silicon carbide films prepared by PECVD
By Huran J. Hrubcin L. Kobzev A.P. Liday J.
Vacuum, Vol. 47, Iss. 10, 1996-10 ,pp. :
Stoichiometric limitations of RF plasma deposited amorphous silicon-nitrogen alloys
Thin Solid Films, Vol. 311, Iss. 1, 1997-12 ,pp. :
Hydrogenated amorphous silicon deposited by DC magnetron sputtering at high temperature
By Cherfi R. Farhi G. Aoucher M. Zellama K.
Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. :