Electrical properties of Ge-Au films prepared by magnetron sputtering

Author： Berlicki T.M.   Prociow E.L.   Beensh-Marchwicka G.   Osadnik S.J.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.65, Iss.1, 2002-02, pp. : 73-79

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Structure effect on electrical properties of ITO films prepared by RF reactive magnetron sputtering

By Meng L.-J.   Dos Santos M.P.  

Thin Solid Films, Vol. 289, Iss. 1, 1996-11 ,pp. : 65-69

Elsevier

Access to resources Recommend Favorite

Characterization of TiN films prepared by a conventional magnetron sputtering system: influence of nitrogen flow percentage and electrical properties

By Kawamura M.   Abe Y.   Yanagisawa H.   Sasaki K.  

Thin Solid Films, Vol. 287, Iss. 1, 1996-10 ,pp. : 115-119

Elsevier

Access to resources Recommend Favorite

Structural, electrical and optical properties of zinc nitride thin films prepared by reactive rf magnetron sputtering

By Futsuhara M.   Yoshioka K.   Takai O.  

Thin Solid Films, Vol. 322, Iss. 1, 1998-06 ,pp. : 274-281

Elsevier

Access to resources Recommend Favorite

Optical and electrical properties of pure Ag and Ag-based alloy thin films prepared by RF magnetron sputtering

By Suzuki T.   Abe Y.   Kawamura M.   Sasaki K.   Shouzu T.   Kawamata K.  

Vacuum, Vol. 66, Iss. 3, 2002-08 ,pp. : 501-504

Elsevier

Access to resources Recommend Favorite

Influence of deposition conditions on the properties of a-GeC:H and a-Ge:H films prepared by r.f. magnetron sputtering

By Saito N.   Yoshioka S.   Nakamura S.   Nakaaki I.   Yamaguchi T.  

Thin Solid Films, Vol. 269, Iss. 1, 1995-11 ,pp. : 69-74

Elsevier

Access to resources Recommend Favorite