High-quality p-n junction fabrication by ion implantation using the LPCVD amorphous silicon films

Author： Jaroszewicz B.   Budzynski T.   Panas A.   Kociubinski A.   Slysz W.   Jung W.   Jakiela R.   Barcz A.   Marczewski J.   Grabiec P.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.70, Iss.2, 2003-03, pp. : 81-85

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