Atomistic simulations of amorphization processes in ion-implanted Si: Roles of defects during amorphization, relaxation, and crystallization

By Motooka T.  

Thin Solid Films, Vol. 272, Iss. 2, 1996-01 ,pp. : 235-243

Elsevier

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Reduction of the annealing temperature of radiation-induced defects in ion-implanted MOS structures

By Kaschieva S.   Dmitriev S.N.   Skorupa W.  

Applied Physics A, Vol. 78, Iss. 4, 2004-03 ,pp. : 607-610

Springer Publishing Company

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Infra-red reflectivity of ion-implanted and pulsed excimer laser irradiated 4H-SiC

By Key P.H.   Sands D.   Schlaf M.   Walton C.D.   Anthony C.J.   Brunson K.M.   Uren M.J.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 200-203

Elsevier

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Tribological properties of ion-implanted polyphenylene oxide (PPO)

By San J.   Liu J.   Zhu B.   Liu Z.   Dong C.   Zhang Q.  

Wear, Vol. 251, Iss. 1, 2001-10 ,pp. : 1504-1510

Elsevier

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Wear and friction characteristics of ion-implanted zirconia ceramics

By Stachowiak G.B.   Stachowiak G.W.   Evans P.  

Wear, Vol. 241, Iss. 2, 2000-07 ,pp. : 220-227

Elsevier

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