Asymmetric carrier transport in InGaAs quantum wells and wires grown on tilted InP substrates

By Monte A.F.G.   da Silva S.W.   Cruz J.M.R.   Morais P.C.   Chaves A.S.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 169-171

Elsevier

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Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD

By Moldavskaya L.D.   Shashkin V.I.   Drozdov M.N.   Drozdov Y.N.   Daniltsev V.M.   Murel A.V.   Andreev B.A.   Yablonsky A.N.   Gusev S.A.   Gaponova D.M.   Khrykin O.I.   Luk'yanov A.Y.   Sadova E.N.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 634-635

Elsevier

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Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

By Lavrentieva L.   Vilisova M.   Bobrovnikova I.   Ivonin I.   Preobrazhenskii V.   Chaldyshev V.  

Russian Physics Journal, Vol. 49, Iss. 12, 2006-12 ,pp. : 1334-1343

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Spontaneous and stimulated emission in ZnCdTe-ZnTe quantum wells grown by LP-MOCVD

By Shan C.X.   Fan X.W.   Zhang J.Y.   Zhang Z.Z.   Lu Y.M.   Liu Y.C.   Shen D.Z.  

Thin Solid Films, Vol. 401, Iss. 1, 2001-12 ,pp. : 225-228

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Substrate temperature dependence of properties of ZnO thin films deposited by LP-MOCVD

By Ye J.D.  

Applied Physics A, Vol. 78, Iss. 5, 2004-03 ,pp. : 761-764

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