Improving SiC lateral DMOSFET reliability under high field stress

Author: Ayalew T.   Gehring A.   Park J.M.   Grasser T.   Selberherr S.  

Publisher: Elsevier

ISSN: 0026-2714

Source: Microelectronics Reliability, Vol.43, Iss.9, 2003-09, pp. : 1889-1894

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Abstract