Competition between thermal donors and thermal acceptors in electron-irradiated silicon annealed at 400-700 o C

Author: Antonova I.V.   Gulyev M.B.   Safronov L.N.   Smagulova S.A.  

Publisher: Elsevier

ISSN: 0167-9317

Source: Microelectronic Engineering, Vol.66, Iss.1, 2003-04, pp. : 385-391

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Abstract