Heterostructures formed on silicon by high-dose multi-energy hydrogen implantation

Author： Naumova O.V. Antonova I.V. Popov V.P. Stas V.F.

Publisher： Elsevier

ISSN： 0167-9317

Source： Microelectronic Engineering, Vol.66, Iss.1, 2003-04, pp. : 422-426

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Enhancement of Defect Production Rates in n -Type Silicon by Hydrogen Implantation Near 270 K

By Tokuda Yutaka

Journal of Electronic Materials, Vol. 39, Iss. 6, 2010-06 ,pp. : 719-722

Springer Publishing Company

Access to resources Recommend Favorite

Phosphorus implantation into 4H-silicon carbide

By Capano M. Santhakumar R. Venugopal R. Melloch M. Cooper J.

Journal of Electronic Materials, Vol. 29, Iss. 2, 2000-02 ,pp. : 210-214

Springer Publishing Company

Access to resources Recommend Favorite

Ge/Si heterostructures with coherent Ge quantum dots in silicon for applications in nanoelectronics

By Pchelyakov O P Dvurechensky A V Latyshev A V Aseev A L

Semiconductor Science and Technology, Vol. 26, Iss. 1, 2011-01 ,pp. : 14027-14030

IOP Publishing

Access to resources Recommend Favorite

Ultra-shallow P + /N junctions formed by recoil implantation

By Liu Henley Gearhart Steven Booske John Wang Wei

Journal of Electronic Materials, Vol. 27, Iss. 9, 1998-09 ,pp. : 1027-1029

Springer Publishing Company

Access to resources Recommend Favorite

Methods of defect-engineering shallow junctions formed by B + -implantation in Si

By Roth E. Holland O. Venezia V. Nielsen Bent

Journal of Electronic Materials, Vol. 26, Iss. 11, 1997-11 ,pp. : 1349-1354

Springer Publishing Company

Access to resources Recommend Favorite