Effects of O 2 annealing after etching SrBi 2 Ta 2 O 9 thin film in Cl 2 /CF 4 /Ar plasma

By Kim D.-P.   Kim C.-I.   Yu B.-G.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 904-911

Elsevier

Access to resources Recommend Favorite

Thermal Ta2O5 films as a gate insulator for thin film capacitors

By Spassov D.   Atanassova E.  

International Journal of Electronics, Vol. 84, Iss. 5, 1998-05 ,pp. : 453-466

Taylor & Francis Ltd

Access to resources Recommend Favorite

Electrical properties of Ca x Sr 1−x Bi 2 Ta 2 O 9 ferroelectric-gate field-effect transistors

By Zhang Wei   Takahashi Mitsue   Sakai Shigeki  

Semiconductor Science and Technology, Vol. 28, Iss. 8, 2013-08 ,pp. : 85003-85009

IOP Publishing

Access to resources Recommend Favorite

Characterization of (Ba,Sr)TiO 3 thin-film capacitors with Ir bottom electrodes and its improvement by plasma treatment

By Wuu D.-S.   Horng R.-H.   Lin C.-C.   Liu Y.-H.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 600-607

Elsevier

Access to resources Recommend Favorite

Bias-stability improvement using Al₂O₃ interfacial dielectrics in a-InSnZnO thin-film transistors

By Jang Kyungsoo   Raja Jayapal   Kim Jiwoong   Park Cheolmin   Lee Youn-Jung   Yang Jaehyun   Kim Hyoungsub   Yi Junsin  

Semiconductor Science and Technology, Vol. 28, Iss. 8, 2013-08 ,pp. : 85015-85019

IOP Publishing

Access to resources Recommend Favorite