Effects of high temperature annealing on the device characteristics of Ga 0.52 In 0.48 P/GaAs and Al 0.52 In 0.48 P/GaAs heterojunction bipolar transistors

Author: Yow H.   Houston P.   Button C.   David J.   Ng C.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.27, Iss.1, 1998-12, pp. : 18-24

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