Effect of in situ annealing on highly-mismatched In 0.75 Ga 0.25 As on InP grown using molecular beam epitaxy

Author: Ren Y.   Micovic M.   Cai W.   Mohney S.   Lord S.   Miller D.   Mayer T.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.28, Iss.7, 1999-07, pp. : 887-893

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