Properties of GaN epitaxial layers grown at high growth rates by metalorganic chemical vapor deposition

By Kokubun Y.   Nishio J.   Abe M.   Ehara T.   Nakagomi S.  

Journal of Electronic Materials, Vol. 30, Iss. 1, 2001-01 ,pp. : 23-26

Springer Publishing Company

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P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition

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Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

By Yablonskii G.   Gurskii A.   Lutsenko E.   Marko I.   Schineller B.   Guttzeit A.   Schön O.   Heuken M.   Heime K.   Beccard R.   Schmitz D.   Juergensen H.  

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Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition

By Li X.   Jones A.   Roh S.   Turnbull D.   Bishop S.   Coleman J.  

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Hot plasma chemical vapor deposition of GaN on GaAs(100) substrate

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