Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD

By Xie Z.   Wei C.   Chen S.   Jiang S.   Edgar J.  

Journal of Electronic Materials, Vol. 29, Iss. 4, 2000-04 ,pp. : 411-417

Springer Publishing Company

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Acceptor and donor doping of Al x Ga 1−x N thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

By Davis R.   Bremser M.   Perry W.   Nam O.   Griffis D.   Loesing R.   Ricks D.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 229-232

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Properties of GaN Epitaxial Layers Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

By Lee C.D.   Ramachandran V.   Sagar A.   Feenstra R.M.   Greve D.W.   Sarney W.L.   Salamanca-Riba L.   Look D.C.   Bai Song   Choyke W.J.   Devaty R.P.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 162-169

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Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates

By Perry William   Zheleva T.   Bremser M.   Davis R.   Shan W.   Song J.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 224-231

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Growth of oriented diamond film on single crystalline 6H-SiC substrates

By Li Xi   Hayashi Y.   Lilov S.   Nishino S.  

Journal of Electronic Materials, Vol. 27, Iss. 1, 1998-12 ,pp. : 32-37

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