Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire

By Romano L.   Krusor B.   Singh R.   Moustakas T.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 285-289

Springer Publishing Company

Access to resources Recommend Favorite

GaN grown on nano-patterned sapphire substrates

By Jing Kong   Meixin Feng   Jin Cai   Hui Wang   Huaibing Wang   Hui Yang  

Journal of Semiconductors, Vol. 36, Iss. 4, 2015-04 ,pp. : 43003-43006

IOP Publishing

Access to resources Recommend Favorite

Impurity Band in the Interfacial Region of GaN Films Grown by Hydride Vapor Phase Epitaxy

By Hsu J.W.P.   Lang D.V.   Richter S.   Kleiman R.N.   Sergent A.M.   Look D.C.   Molnar R.J.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 115-122

Springer Publishing Company

Access to resources Recommend Favorite

Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates

By Wang Kun   Pavlidis Dimitris   Cao Jun  

Journal of Electronic Materials, Vol. 26, Iss. 1, 1997-12 ,pp. : 1-6

Springer Publishing Company

Access to resources Recommend Favorite

Effect of O 2 /CHF 3 plasma treatment on n-type GaN grown on sapphire by MOCVD

By Qin Z.X.   Chen Z.Z.   Zhang H.X.   Ding X.M.   Hu X.D.   Yu T.J.   Tong Y.Z.   Zhang G.Y.  

Materials Science in Semiconductor Processing, Vol. 5, Iss. 6, 2002-12 ,pp. : 473-475

Elsevier

Access to resources Recommend Favorite