A comparison of ethyl iodide and hydrogen chloride for doping ZnSe grown by photoassisted MOVPE

By Parent D.   Kalisetty S.   Zhang X.   Zhao G.   Zappone W.   Robinson J.   Heller E.   Ayers J.   Jain F.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 710-714

Springer Publishing Company

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New mechanisms in photo-assisted MOVPE of II-VI semiconductors

By Irvine S.   Stafford A.   Ahmed M.   Brown A.   Kheyrandish H.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 723-727

Springer Publishing Company

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Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio

By Nakadaira Atsushi   Tanaka Hidenao  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 320-324

Springer Publishing Company

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MOVPE growth of Si-doped GaAs and Al x Ga 1-x As using tertiarybutylarsine (TBA) in pure N 2 ambient

By Huang G.S.   Tang X.H.   Zhang B.L.  

Materials Science in Semiconductor Processing, Vol. 6, Iss. 4, 2003-08 ,pp. : 171-174

Elsevier

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MOVPE growth and optical properties of gan deposited on c-plane sapphire

By Briot O.   Gil B.   Tchounkeu M.   Aulombard R.   Demangeot F.   Frandon J.   Renucci M.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 294-300

Springer Publishing Company

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